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Indium(III) Arsenide (InAs)

Indium(III) arsenide, InAs, or indium monoarsenide, is a semiconductor material that has the appearance of grey cubic crystals. It has a melting point of 942°C. It is a strong photo-dember emitter with superior electron mobility and velocity and a narrow energy bandgap.

Purity: 99.999% (5N)
Typical Applications

Indium arsenide is used in semiconductor electronics and the construction of infrared detectors. It is widely used as a terahertz radiation source. Indium Arsenide is also used in high-power applications detectors and diode lasers.

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Indium Arsenide TSCA (SARA Title III) Status: Listed. Acute toxicity.
Please contact the EPA Office of Chemical Safety and Pollution Prevention (OCSPP) at 202-564-2902.

Indium Arsenide (InAs) CAS Number: 1303-11-3
Indium Arsenide (InAs) Packaging: Packing Group= III; UN Number 1557

Indium Arsenide (InAs) Product Safety Information: EU Classification: Toxic (T) and Dangerous for the environment (N)A

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